Atomic-layer-deposited atomically thin In2O3 channel for BEOL logic and memory applications from j channel window Watch Video
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⏲ Duration: 31 min 15 sec ✓ Published: 16-Oct-2021
Description: In this talk, we report on the first demonstration of atomically thin In2O3 channel for logic and memory devices by a back-end-of-line (BEOL) compatible atomic layer deposition (ALD) process. High performance planar In2O3 transistors with high mobility of 113 cm2/V⋅s and record high maximum drain current of 2.5 mA/um are achieved by channel thickness engineering and post-deposition annealing. High-performance ALD In2O3 based zero-VGS-load inverter is demonstrated with maximum voltage gain of 3
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